NTE2928 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Type Package Features: R = 550m Max V = 10V, I = 6A DS(on) GS D Low Gate Charge: 22nC Typ D Low C : 11pF Typ RSS 100% Avalanche Tested Applications: G LCD/LED/PDP TV Lighting S Uninterruptible Power Supply Absolute Maximum Ratings: (T = +25 C unless otherwise specified) C DrainSource Voltage, V ........................................................ 500V DSS GateSource Voltage, V ........................................................ 30V GSS Drain Current, I D Continuous T = +25 C ............................................................. 11.5A C T = +100 C ............................................................. 6.9A C Pulsed (Note 1) .............................................................. 46A Single Pulsed Avalanche Energy (Note 2), E ...................................... 456mJ AS Avalanche Current (Note 1), I .................................................... 11.5A AR Repetitive Avalanche Energy (Note 1), E ......................................... 16.7mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 4.5V/ns Power Dissipation (T = +25 C), P ................................................ 165W C D Derate Above +25 C ..................................................... 1.33W/ C Operating Temperature Range, T .......................................... 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead temperature (During Soldering, 1/8 from case, 5 sec ), T .............. +300 C L Maximum Thermal Resistance, Junction toCase, R ........................... 0.75 C/W thJC Maximum Thermal Resistance, Junction toAmbient, R ........................ 62.5 C/W thJA Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. L = 6.9mH, I = 11.5A, V = 50V, R = 25 , starting T = +25 C. AS DD G J Note 3. I 11.5A, di/dt 200A/ s, V V , starting T = +25 C. SD DD (BR)DSS JElectrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V V = 0V, I = 250 A, T = +25 C 500 V (BR)DSS GS D J Breakdown Voltage Temperature Coefficient V / T I = 250 A, Referenced to +25 C 0.5 V/ C (BR)DSS J D Zero Gate Voltage Drain Current I V = 500V, V = 0 1.0 A DSS DS GS 10 V = 400V, T = +125 C A DS C GateBody Leakage Current I V = 30V, V = 0V 100 nA GSS GS DS ON Characteristics Gate Threshold Voltage V V = V , I = 250 A 3.0 5.0 V GS(th) GS DS D Static DrainSource ON Resistance R V = 10V, I = 6A 0.55 0.65 DS(on) GS D Forward Transconductance g V = 40V, I = 6A 11.5 S FS DS D Dynamic Characteristics Input Capacitance C 985 1315 pF V = 0V, V = 25V, iss GS DS f = 1MHz Output Capacitance C 140 190 pF oss Reverse Transfer Capacitance C 11 17 pF rss Total Gate Charge Q 22 30 nC V = 400V I = 11.5A, g DD , D V = 10V, Note 4 GS GateSource Charge Q 6 nC gs GateDrain Charge Q 9 nC gd Switching Characteristics TurnOn Delay Time t 24 60 ns V = 250V I = 11.5A, d(on) DD , D V = 10V, R = 25 , Note 4 GS G Rise Time t 50 110 ns r TurnOff Delay Time t 45 100 ns d(off) Fall Time t 30 70 ns f DrainSource Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode I 11.5 A S Forward Current Maximum Pulsed Drain-Source Diode I 46 A SM Forward Current DrainSource Diode Forward Voltage V V = 0V, I = 11.5A 1.4 V SD GS S Reverse Recovery Time t V = 0V, I = 11.5A, 375 ns rr GS SD dI /dt = 100A/ s F Reverse Recovery Charge Q 3.5 C rr Note 4. Essentially independent of operating temperature typical characteristics.