NTE2545 (NPN) & NTE2546 (PNP) Silicon Complementary Transistors Darlington, High Speed Driver Features: High Speed Switching Wide ASO Range High Gain Bandwidth Product Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 3.0 mA EBO EB C DC Current Gain h V = 2V, I = 2.5A 2000 5000 FE CE C GainBandwidth Product f V = 5V, I = 2.5A 200 MHz T CE C Collector Emitter Saturation Volt- V CE(sat) age I = 2.5A, I = 5mA 0.9 V C B NTE2545 NTE2546 1.0 1.5 V Base Emitter Saturation Voltage V I = 2.5A, I = 5mA 2.0 V BE(sat) C B Collector Base Breakdown Voltage V I = 5mA, I = 0 70 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 50mA, R = 60 V (BR)CEO C BEElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit TurnOn Time t 0.3 s V = 20V, V = 5V, on CC BE 500I = 500I = I = 2A, B1 B2 C Storage Time t stg Pulse Width = 50 s, NTE2545 1.2 s Duty Cycle Duty Cycle 1%, Note 1 1%, Note 1 NTE2546 1.3 s Fall Time t 0.2 s f Note 1. For NTE2546, the polarity is reversed. NTE2545 (NPN) .420 (10.67) Max C B .110 (2.79) E .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max NTE2546 (PNP) .500 (12.7) Min .070 (1.78) Max C Base Emitter B .100 (2.54) Collector/Tab E