Product Information

NTE255

NTE255 electronic component of NTE

Datasheet
Transistor: NPN; bipolar; 300V; 500mA; 2W; TO237
Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 3.3525 ea
Line Total: USD 67.05

0 - Global Stock
MOQ: 20  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 20
Multiples : 1

Stock Image

NTE255
NTE

20 : USD 3.3525
50 : USD 2.0844
100 : USD 1.8792
200 : USD 1.7496
500 : USD 1.6308

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NTE255
NTE

1 : USD 3.6772
3 : USD 3.3109
7 : USD 2.4017
18 : USD 2.2797

Read More Specifications

     
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Additional Infomation About Product

NTE255 Silicon NPN Transistor Horizontal Driver, Amp Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Power Dissipation (T = +25C), P max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW A D Power Dissipation (T = +25C), P max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W COLLECTOR LEAD D Maximum Operating Junction Temperature, T max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Thermal Resistance, JunctiontoCase (T = +25C), R . . . . . . . . . . . 62.5C/W COLLECTOR LEAD thJC Thermal Resistance, JunctiontoAmbient (T = +25C), R . . . . . . . . . . . . . . . . . . . . . . 147C/W A thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 300V 1.0 A CBO CB DC Current Gain h I = 50mA, V = 10V, Note 1 25 FE C CE I = 100mA, V = 10V, Note 1 30 C CE I = 250mA, V = 10V, Note 1 15 C CE I = 500mA, V = 10V, Note 1 10 50 C CE CollectorEmitter Saturation Voltage V I = 100mA, I = 10mA, Note 1 0.2 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 500mA, I = 100mA, Note 1 0.9 1.2 V BE(sat) C B Transition Frequency f I = 50mA 30 300 MHz T C Output Capacitance C V = 10V, f = 1MHz 15 pF ob CB Input Capacitance C V = 0.5V, f = 1MHz 125 pF ib BE Note 1. Pulse Test: Pulse Width = 300 s..200 (5.08) .180 (4.57) .100 (2.54) .180 (4.57) E B C .594 (15.09) .018 (0.46) .015 (0.38) 3.050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE may also be referenced as

NTE ELECTRONICS
NTE ELECTRONICS, INC.

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