Product Information

NTE2547

NTE2547 electronic component of NTE

Datasheet
Transistor: NPN; bipolar; Darlington; 100V; 8A; 20W; TO220FP

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 2.09 ea
Line Total: USD 6.27

2 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
2 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3
Multiples : 1
3 : USD 2.09
25 : USD 1.9
250 : USD 1.5125
500 : USD 1.425
1000 : USD 1.375
2500 : USD 1.325
5000 : USD 1.2875
7500 : USD 1.2625

     
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Transistor
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
Current Gain
Frequency
LoadingGif

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Image Description
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NTE2547 (NPN) & NTE2548 (PNP) Silicon Complementary Transistors Darlington Driver TO220 Full Pack Features: High DC Current Gain High Current Capacity and Wide ASO Low Saturation Voltage Applications: Motor Drivers Printer Hammer Drivers Relay Drivers Voltage Regulator Control Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V ..................................................... 110V CBO Collector to Emitter Voltage, V ................................................... 100V CEO Emitter to Base Voltage, V ........................................................ 6V EBO Collector Current, I C Continuous ................................................................... 8A Peak ....................................................................... 12A Collector Dissipation, P C T = +25C ................................................................. 2.0W A T = +25C ................................................................. 20W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C, Note 1 unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 80V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 3.0 mA EBO EB C DC Current Gain h V = 3V, I = 4A 1500 4000 FE CE C Transition Frequency f V = 5V, I = 4A 20 MHz T CE C Note 1. For NTE2548 (PNP), the polarity is reversed. Rev. 615Electrical Characteristics (Contd): (T = +25C, Note 1 unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectortoEmitter Saturation Voltage NTE2547 V I = 4A, I = 8mA 0.9 1.5 V CE(sat) C B NTE2548 1.0 1.5 V BasetoEmitter Saturation Voltage V I = 4A, I = 8mA 2.0 V BE(sat) C B CollectorBase Breakdown Voltage V I = 5mA, I = 0 110 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 50mA, R = 100 V (BR)CEO C BE TurnOn Time NTE2547 t 0.6 s I = 500I = 500I = 4A, on C B1 B2 V = 50V, R = 12.5 CC L NTE2548 0.7 s Storage Time NTE2547 t 4.8 s stg NTE2548 1.4 s Fall Time NTE2547 t 1.6 s f NTE2548 1.5 s Note 1. For NTE2548 (PNP), the polarity is reversed. NTE2547 (NPN) .177 (4.5) C .394 (10.0) .108 (2.75) B .169 (4.3) .335 (8.5) Isol E .590 (15.0) BC E NTE2548 (PNP) .150 (3.8) C .532 (13.5) B Min E .100 (2.54) .090 (2.3) NOTE: Tab is isolated

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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