NTE2931 MOSFET NChannel, Enhancement Mode High Speed Switch TO3PML Type Package D Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge G Extended Safe Operating Area Lower R (on): 0.144 Typ DS S Lower Leakage Current: 10 A (Max) V = 200V DS Absolute Maximum Ratings: DraintoSource Voltage, V ..................................................... 200V DSS Drain Current, I D Continuous T = +25 C ............................................................. 12.8A C T = +100 C ............................................................. 8.1A C Pulsed (Note 1) .............................................................. 80A Total Power Dissipation (T = +25 C), P ............................................ 73W C D Derate Above 25 C ...................................................... 0.59W/ C GateSource Voltage, V ......................................................... 30V GS Single Pulsed Avalanche Energy (Note 2), E ...................................... 328mJ AS Avalanche Current (Note 1), I .................................................... 12.8A AR Repetitive Avalanche Energy (Note 1), E .......................................... 7.3mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 5.0V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Thermal Resistance, Junction toCase, R ..................................... 1.7 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 3mH, I = 12.8A, V = 50V, R = 27 , Starting T = +25 C. AS DD G J Rev. 1013Note 3. I 18A, di/dt 260A/ s, V V , Starting T = +25 C. SD DD (BR)DSS J