NTE2935 MOSFET NChannel, Enhancement Mode High Speed Switch TO3PML Type Package Features: D Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area G Lower R (on): 0.638 Typ DS Lower Leakage Current: 10 A (Max) V = 500V DS S Absolute Maximum Ratings: DraintoSource Voltage, V ..................................................... 500V DSS Drain Current, I D Continuous T = +25 C .............................................................. 6.2A C T = +100 C ............................................................. 3.9A C Pulsed (Note 1) .............................................................. 34A Total Power Dissipation (T = +25 C), P ............................................ 85W C D Derate Above 25 C ...................................................... 0.68W/ C GateSource Voltage, V ......................................................... 30V GS Single Pulsed Avalanche Energy (Note 2), E ...................................... 641mJ AS Avalanche Current (Note 1), I ..................................................... 6.2A AR Repetitive Avalanche Energy (Note 1), E .......................................... 8.5mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 3.5V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Thermal Resistance, Junction toCase, R .................................... 1.46 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 30mH, I = 6.2A, V = 50V, R = 27 , Starting T = +25 C. AS DD G J Rev. 1013Note 3. I 8A, di/dt 160A/ s, V V , Starting T = +25 C. SD DD (BR)DSS J