NTE293 (NPN) & NTE294 (PNP) Silicon Complementary Transistors Audio Amplifier and Driver Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in lowfrequency power amplification and drive applications. Features: Low CollectorEmitter Saturation Voltage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . 60V CBO CollectorEmitter Voltage, V 50V CEO EmitterBase Voltage, V 5V EBO Collector Current, I C Continuous . 1A Peak 1.5A Collector Power Dissipation, P 1W C Operating Junction Temperature, T . +150C J Storage Temperature Range, T 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 10 A, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 2mA, I = 0 50 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 20V, I = 0 0.1 A CBO CB E DC Current Gain h V = 10V, I = 500mA, Note 2 120 240 FE CE C V = 5V, I = 1A, Note 2 50 100 CE B CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA, Note 2 0.2 0.4 V CE(sat) C B BaseEmitter Saturation Voltage V I = 500mA, I = 50mA, Note 2 0.85 1.2 V BE(sat) C B CurrentGain Bandwidth Product f V = 10V, I = 50mA, f = 200MHz 200 MHz T CB E Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 11 20 pF ob CB e Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. Pulse measurement..339 (8.62) Max Seating Plane .026 (.66) Dia Max .512 (13.0) Min E C B .100 (2.54) .200 (5.08) Max .240 (6.09) Max