NTE2985 Logic Level MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Type Package Features: Dynamic dv/dt Rating D Logic Level Gate Drive R (on) Specified at V = 4V & 5V DS GS +175 C Operating Temperature Fast Switching Ease of Paralleling G Simple Drive Requirements S Absolute Maximum Ratings: Drain Current, I D Continuous (V = 5V) GS T = +25 C ............................................................... 30A C T = +100 C .............................................................. 21A C Pulsed (Note 1) ............................................................. 110A Total Power Dissipation (T = +25 C), P ............................................ 88W C D Derate Above 25 C ...................................................... 0.59W/ C GateSource Voltage, V ......................................................... 10V GS Single Pulsed Avalanche Energy (Note 2), E ...................................... 220mJ AS Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 4.5V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T .......... +300 C L Mounting Torque, 6 32 or M3 Screw ..................................... 10 lbf in (1.1 N m) Thermal Resistance: Maximum JunctiontoCase, R .......................................... 1.7K/W thJC Typical Case toSink (Mounting surface flat, smooth, and greased), R ....... 0.5K/W thCS Maximum Junction toAmbient (Free Air Operation), R ..................... 62K/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 285 H, V = 25V, R = 25 , Starting T = +175 C, I = 30A. DD G J AS Note 3. I 30A, di/dt 200A/ s, V V , T +175 C. SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage BV V = 0V, I = 250 A 60 V DSS GS D Breakdown Voltage Temperature V / Reference to +25 C, I = 1mA 0.07 V/ C (BR)DSS D Coefficient T J Static DrainSource ON Resistance R V = 5V, I = 18A, Note 4 0.05 DS(on) GS D V = 4V, I = 15A, Note 4 0.07 GS D Gate Threshold Voltage V V = V , I = 250 A 1.0 2.0 V GS(th) DS GS D Forward Transconductance g V 25V, I = 18A, Note 4 12 mhos fs DS D DraintoSource Leakage Current I V = 60V, V = 0 25 A DSS DS GS V = 48V, V = 0V, , T = +150 C 250 A DS GS C GateSource Leakage Forward I V = 10V 100 nA GSS GS GateSource Leakage Reverse I V = 10V 100 nA GSS GS Total Gate Charge Q V = 5V, I = 30A, V = 48V 35 nC g GS D DS GateSource Charge Q 7.1 nC gs GateDrain (Miller) Charge Q 25 nC gd TurnOn Delay Time t V = 30V I = 30A, R = 6.0 , 14 ns d(on) DD , D G R = 1.0 D Rise Time t 170 ns r TurnOff Delay Time t 30 ns d(off) Fall Time t 56 ns f Internal Drain Inductance L Between lead, 6mm (0.25) from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C V = 0V, V = 25V, f = 1MHz 1600 pF iss GS DS Output Capacitance C 660 pF oss Reverse Transfer Capacitance C 170 pF rss SourceDrain Diode Ratings and Characteristics Continuous Source Current I (Body Diode) 30 A S Pulse Source Current I (Body Diode) Note 1 110 A SM Diode Forward Voltage V T = +25 C, I = 30A, V = 0V, Note 4 1.6 V SD J S GS Reverse Recovery Time t 120 180 ns T = +25 C, I = 30A, di/dt = 100A/ s, rr J F Note 4 Reverse Recovery Charge Q 0.7 1.3 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible on (turnon is dominated by L + L ) S D Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.