NTE2988 MOSFET NChannel, Enhancement Mode High Speed Switch TO52 Type Package Description: The NTE2988 is an N Channel, enhancement mode, power field effect transistor in a TO 52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers. Features: High Input Impedance D Extremely Fast Switching Rugged Dissipation Limited SOA Internal Drain Source Diode G Benefits: Reduced Component Count Simpler Designs Directly Interfaces CMOS & TTL S Improved Circuit Performance Increased Reliability Absolute Maximum Ratings: (T = +25C unless otherwise specified) A DrainSource Voltage ............................................................... 60V DrainGate Voltage ................................................................. 60V Peak Gate Current .............................................................. 100mA GateSource Voltage ....................................................... +15V, 0.3V Drain Current Continuous (Note 1) ........................................................ 0.2A Pulsed (Note 2) ............................................................ 1.0A Maximum Dissipation (T = +25C) ............................................... 315mW C Linear Derating Factor .................................................. 2.5mW/ C Operating Temperature Range, T ......................................... 55 to +150C opr Storage Temperature Range, T .......................................... 55 to +150C stg Lead Temperature (During Soldering, 1/16 from case, 10sec), T ..................... +300 C L Note 1. Limited by package dissipation. Note 2. Pulse test 80 s to 300 s, 1% duty cycle. Rev. 516Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics DrainSource Breakdown Voltage BV I = 1000 A, V = 0 60 V DSS D GS Gate Threshold Voltage V V = V , I = 1mA 0.8 2.5 V GS(th) DS GS D GateBody Leakage I V = 15V, V = 0 100 nA GSS GS DS Zero Gate Voltage Drain Current I V = 50V, V = 0 10 A DSS DS GS OnState Drain Current I V = 5V, I = 0.2A, Note 2 1.5 V D(on) GS D V = 10V, I = 0.5A, Note 2 2.5 V GS D StaticDrainSource OnState r V = 5V, I = 0.2A, Note 2 7.5 DS(on) GS D Resistance V = 10V, I = 0.5A, Note 2 5.0 GS D Dynamic Characteristics Forward Transconductance g V = 15V, I = 0.5A, Note 2 200 mS fs DS D Input Capacitance C V = 25V, f = 1MHz 60 pF iss DS Reverse Transfer Capacitance C 5 pF rss Common Source Output Capacitance C 25 pF oss TurnOn Time t V = 15V, R = 23 , R = 25 , 10 ns ON DD L g I = 0.6A D TurnOff Time t 10 ns OFF DrainSource Diode Characteristics Forward ON Voltage V I = 0.5A, V = 0, Note 2 0.85 V SD S GS Reverse Recovery Time t V = 0, I = I = 0.5A 160 ns rr GS F R Note 2. Pulse test 80 s to 300 s, 1% duty cycle. .230 (5.84) Dia Max 195 (4.95) Dia Max .150 (3.81) Max .500 (12.7) Min .019 (0.5) Dia Gate Source Drain/Case 45 .040 (1.01)