NTE2987 NTE

NTE2987 Logic Level MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Avalanche Rugged Technology Logic Level Gate Drive R (on) = 0.09 Typ. at V = 5V DS GS +175 C Operating Temperature Fast Switching G Low Gate Charge High Current Capability S Absolute Maximum Ratings: Drain Current, I D Continuous T = +25 C ............................................................... 20A C T = +100 C .............................................................. 14A C Pulsed (Note 1) .............................................................. 80A Total Power Dissipation (T = +25 C), P ........................................... 105W C D Derate Above 25 C ....................................................... 0.7W/ C GateSource Voltage, V ......................................................... 15V GS Avalanche Current, Repetitive or Non Repetitive (Note 2), I ........................... 20A AR Single Pulsed Avalanche Energy (Note 3), E ...................................... 120mJ AS Repetitive Avalanche Energy (Note 2), E .......................................... 30mJ AR Avalanche Current, Repetitive or Non Repetitive (Note 4), I ........................... 14A AR DrainSource Voltage (V = 0), V ................................................ 100V GS DS DrainGate Voltage (R = 20k ), V ............................................. 100V GS DGR Operating Junction Temperature, T ............................................... +175 C J Storage Temperature Range, T .......................................... 65 to +175 C stg Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T .......... +300 C L Thermal Resistance: Maximum JunctiontoCase, R ........................................ 1.43 C/W thJC Typical Case toSink (Mounting surface flat, smooth, and greased), R ...... 0.5 C/W thCS Maximum Junction toAmbient (Free Air Operation), R ................... 62.5 C/W thJA Note 1. Pulse width limited by safe operating area. Note 2. Pulse width limited by T max, Duty Cycle < 1%. J Note 3. V = 25V, I = I , Starting T = +175 C. DD D AR J Note 4. T = +100 C, Pulse width limited by T max, Duty Cycle < 1%. C J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF DrainSource Breakdown Voltage BV V = 0v, I = 250 A 100 V DSS GS D DraintoSource Leakage Current I V = 100V, V = 0 1 A DSS DS GS V = 80V, V = 0V, , T = +150 C 10 A DS GS C GateSource Leakage Forward I V = 15V 100 nA GSS GS GateSource Leakage Reverse I V = 15V 100 nA GSS GS ON (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.6 2.5 V GS(th) DS GS D Static DrainSource ON Resistance R V = 5V, I = 10A 0.09 0.12 DS(on) GS D OnState Drain Current V > I x R max, V = 10V I 20 A DS D(on) DS(on) GS D(on) Dynamic Forward Transconductance g V > I x R max, I = 10A, 10 16 mhos fs DS D(on) DS(on) D Note 5 Input Capacitance C V = 0V, V = 25V, f = 1MHz 1200 1500 pF iss GS DS Output Capacitance C 250 350 pF oss Reverse Transfer Capacitance C 60 90 pF rss Switching Total Gate Charge Q 22 30 nC V = 5V, I = 20A, V = 80V g GS D DD GateSource Charge Q 6 nC gs GateDrain (Miller) Charge Q 12 nC gd TurnOn Delay Time t 50 70 ns V = 30V I = 10A, R = 50 , d(on) DD , D G V = 5V GS Rise Time t 140 200 ns r TurnOff Delay Time t V = 80V I = 20A, R = 50 , 80 110 ns d(off) DD , D G V = 5V GS Fall Time t 80 110 ns f SourceDrain Diode Ratings and Characteristics Continuous Source Current I (Body Diode) 20 A S Pulse Source Current I (Body Diode) Note 1 80 A SM Diode Forward Voltage V I = 20A, V = 0V, Note 5 1.5 V SD SD GS Reverse Recovery Time t 130 ns T = +150 C, V = 50V, I = 20A, rr J DD SD di/dt = 100A/ s Reverse Recovery Charge Q 0.4 C rr Reverse Recovery Current I 6 A RRM Note 1. Pulse width limited by safe operating area. Note 5. Pulse Test: Pulse Width = 300 s, Duty Cycle = 1.5%.