Product Information

NTE4828

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Datasheet

Diode: transil; 5kW; 16.7V; 206A; unidirectional; Ø9,1x9,1mm

Manufacturer: NTE

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 7.245 ea
Line Total: USD 72.45

0 - Global Stock

MOQ: 10 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 10 Multiples : 1 NTE4828 NTE	10 : USD 7.245 50 : USD 4.6656 100 : USD 4.3092 200 : USD 3.996 500 : USD 3.7368

0 - WHS 2 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1 Multiples : 1 NTE4828 NTE	1 : USD 8.3722 3 : USD 5.4819 8 : USD 5.1835

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Additional Infomation About Product

NTE4828 thru NTE4868 Surge Clamping, Transient Overvoltage Suppressor Unidirectional Description: The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed for absorbtion of high voltage transients associated with power disturbances, switching and induced lighting effects. These devices were designed to be used on the output of switching power supplies and may be used to replace crowbar circuits. They are able to withstand high levels of peak current while allowing a circuit breaker to trip of a fuse to blow before shorting. This will enable the user to reset the breaker or replace the fuse and continue operation. For this type of operation, it is recommended that a sufficient mounting surface be used for dissipating the heat generated by the device during the transient or overvoltage condition. Features: Glass Passivated Junction 5000W Peak Pulse Power Capability on 10/1000 s Waveform Repetition Rate (Duty Cycle): 0.05% Low Incremental Surge Resistance Fast Response Time Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Minimum Peak Puse Power Dissipation (10/1000 s Waveform, Note 1), P . . . . . . . . . . 5000W PPM Peak Pulse Current (10/1000 s Waveform, Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . . . See Table PPM Steady State Power Dissipation (T = +75C, Lead Length .375 (9.5mm), Note 2), P . . . 8W L M(AV) Peak Forward Surge Current, I FSM (8.3ms Single Half SineWave Superimposed on Rated Load, Note 3) . . . . . . . . . . . . . 400A Instantaneous Forward Voltage (I = 100A, Note 3), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V F F Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C stg Lead Temperature (During Soldering, .375 (9.5mm) Lead Length, 10sec ), T . . . . . . . . . . +300C L Note 1. Nonrepetitive current pulse, dereated above T = +C. A 2 2 Note 2. Mounted on Copper Leaf area of 0.79in (20mm ). Note 3. Measured on 8.3ms single half sinewave or equivalent square wave, duty cycle = 4 pulses per minute maximum.Electrical Characteristics: (T = +25C unless otherwise specified) A Maximum Ratings Maximum Reverse Clamping Voltage Reverse Leakage Peak Pulse Temperature I (1msec) Current V Current NTE Type Stand Off Voltage Breakdown Voltage I (Note 4) pp R Coefficient T (Volts) ( A) (Amps) Number (Volts) (Volts) of BV%/C V V V I I R BR C R pp Min Typ Max I mA T 4828 15.0 16.7 20.4 5.0 24.4 10.0 206.00 0.094 4840 24.0 26.7 29.5 5.0 38.9 10.0 128.00 0.101 4846 30.0 33.3 36.8 5.0 48.4 10.0 103.00 0.103 4848 33.0 36.7 40.6 5.0 53.3 10.0 94.00 0.104 4850 36.0 40.0 44.2 5.0 58.1 10.0 85.00 0.104 4858 48.0 53.3 58.9 5.0 77.4 10.0 65.00 0.106 4868 64.0 71.1 78.6 5.0 103.0 10.0 49.00 0.108 Note 4. V measured after I applied for 300ms. I = Square Wave Pulse or equivalent.. (BR) T T 1.000 (25.4) .360 (9.1) Min Max .360 (9.1) Dia Max .052 (1.3) Dia Max Color Band Denotes Cathode

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

NTE may also be referenced as

NTE ELECTRONICS
NTE ELECTRONICS, INC.

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