Product Information

NTE483

NTE483 electronic component of NTE

Datasheet
Transistor: NPN; bipolar; RF; 16V; 7A; 46W; Pout:18W

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 96.5588 ea
Line Total: USD 96.56

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

NTE483
NTE

1 : USD 96.5588
10 : USD 69.4332
25 : USD 64.8
50 : USD 60.75

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

NTE483
NTE

1 : USD 89.964

     
Manufacturer
Product Category
Mounting
Kind Of Transistor
Polarisation
Type Of Transistor
Output Power
Collector-Emitter Voltage
Collector Current
Power Dissipation
Frequency
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NTE483 Silicon NPN Transistor RF Power Output for Mobile Use, P = 18W 866MHz O Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase band- width and power gain over the complete range of 806866MHz. Features: Designed for 806866MHz Mobile Equipment 18W Min., with Greater than 6dB Gain at 836MHz Withstands 10:1 VSWR at Rated Operating Conditions Matched Input Technology Common Base Absolute Maximum Ratings: (T = +25C unless othrwise specified) C CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Maximum Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A C Total Device Dissipation (At +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46W tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8C/W thJC Electrical Characteristic: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static CollectorEmitter Breakdown Voltage V I = 50mA, I = 0, Note 1 16 V (BR)CEO C B V I = 50mA, V = 0, Note 1 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, i = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0 10 mA CES CE BE DC Current Gain h V = 6V, I = 1A 20 FE CE C Note 1. Pulsed through 25mH indicator.Electrical Characteristic (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Output Power P V = 12.5V, f = 836MHz 18 W O CE Power Gain P V = 12.5V, f = 836MHz 6 dB G CE Impedance Z V = 12.5V, P = 15W, f = 836MHz 3.0 j4.8 s CE i Z 1.6 j2.5 cl Output Capacitance C V = 12.5V, I = 0, f = 1MHz 20 pF ob CB E .725 (18.42) .325 (8.28) Max .195 (4.97) Max .130 (3.3) Dia BC .960 (24.38) Max EB .225 (5.72) Max .380 (5.72) Dia Max .285 (7.25) Max .180 .730 (18.54) (4.57) Max .960 (24.38) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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