NTE486 Silicon NPN Transistor RF High Frequency Amplifier Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF largesignal applications required in industrial equipment. Features: Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB Effeciency = 50% S Parameter Data from 100MHz to 1GHz Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 5mA, I = 0 20 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 100 A, I = 0 35 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 100 A, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 10 A CEO CE B ON Characteristics DC Current Gain h V = 10V, I = 50mA 20 60 150 FE CE C CollectorEmitter Saturation Voltage V I = 50mA, I = 5mA 0.5 V CE(sat) C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Current GainBandwidth Product f V = 10V, I = 100mA, f = 200MHz 1800 2000 MHz T CE C Output Capacitance C V = 12.5V, I = 0, f = 1MHz 3.5 4.0 pF ob CB E Functional Tests CommonEmitter Amplifier Power Gain G 8.0 8.5 dB V = 12.5V, P = 0.75W, PE CC O f = 470MHz Collector Efficiency 50 70 % Series Equivalent Input Impedance Z 14+j4.0 in Series Equivalent Output Impedance Z 28j38 out .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector/Case 45 .031 (.793)