NTE484 Silicon NPN Transistor RF Power Output for Mobile Use, P = 25W 947MHz O Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features: Designed for 800 MHz Mobile Communications Equipment 25W Min., with Greater than 5dB Gain at 836MHz Withstands Infinite VSWR at Rated Operating Conditions Internal Input matched Tuned Q Common Base Configuration Absolute Maximum Ratings: (T = +25C unless othrwise specified) C CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Maximum Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C Total Device Dissipation (At +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3C/W thJC Electrical Characteristic: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static CollectorEmitter Breakdown Voltage V I = 50mA, I = 0, Note 1 16 V (BR)CEO C B V I = 50mA, V = 0, Note 1 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0 10 mA CES CE BE DC Current Gain h V = 6V, I = 1A 20 FE CE C Note 1. Pulsed through 25mH indicator.Electrical Characteristic (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Output Power P V = 12.5V, f = 836MHz 25 W O CE Power Gain P V = 12.5V, f = 836MHz 5 dB G CE Impedance Z V = 12.5V, P = 25W, f = 836MHz 4.9 j5.8 s CE O Z 1.4 j3.5 cl Output Capacitance C V = 12.5V, I = 0, f = 1MHz 65 pF ob CB E .725 (18.42) .325 (8.28) Max .195 (4.97) Max .130 (3.3) Dia BC .960 (24.38) Max EB .225 (5.72) Max .380 (5.72) Dia Max .285 (7.25) Max .180 .730 (18.54) (4.57) Max .960 (24.38) Max