NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier (SCR) 125 Amp, TO94 Electrical Characteristics: (Maximum values T = +125C unless otherwise specified) J Repetitive Peak Voltages, V & V DRM RRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5572 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5574 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non Repetitive Peak Reverse Blocking Voltage, V RSM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5572 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V NTE5574 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average OnState Current (Half Sine Wave, 180, T = +85C), I . . . . . . . . . . . . . . . . . . . . 80A C T(AV) RMS On State Current (DC T = +75C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125A C T(RMS) Peak OneCycle, Non Repetitive Surge Current (10ms Duration, Sinusoidal Half Wave), I TSM No Voltage Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1900A 100% V Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600A RRM 2 2 Maximum I t for Fusing (10ms Duration, Sinusoidal Half Wave), I t 2 No Voltage Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18000A sec 2 100% V Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12700A sec RRM Peak Positive Gate Current (5ms Pulse Width), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A GM Peak Positive Gate Voltage (5ms Pulse Width), +V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V GM Peak Negative Gate Voltage (5ms Pulse Width), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V GM Average Gate Power (f = 50Hz, Duty Cycle = 50%), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W G Peak Gate Power (50ms Pulse Width), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W GM Rate of Rise of OffState Voltage (Exponential to 67% Rated V ), dv/dt . . . . . . . . . . . . . 500V/s DRM Rate of Rise of ON State Current, di/dt (Gate Drive 20V, 65, with t = 0.5s, V = Rated V , I = 2 x di/dt snubber 0.2F) r d DRM TM Non Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/s Typical Delay Time, t d (Gate Pulse: 10V, 15 Source, t = 6s, t = 0.1s, V = rated V , I = 50A) . . . . . . 1s p r d DRM TM Typical TurnOn Time, t q (I = 50A, di/dt = 5A/s min, V = 50V, dv/dt = 20V/s, Gate Bias: 0V 25, t = 500s) 110s TM R p OnState Voltage (I = 250A, 10ms Sine Pulse), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V Pk TM Repetitive Peak OffState Current (At V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA DRM DRM Repetitive Peak Reverse Current (At V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA RRM RRM Maximum Gate Current Required to Trigger, I GT (6V AnodetoCathode Applied, T = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA J Maximum Gate Voltage Required to Trigger, V GT (6V AnodetoCathode Applied, T = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5V J Maximum Holding (Anode Supply 12V Resistive Load, T = +25C), I . . . . . . . . . . . . . . . . . 150mA J H Maximum Gate Voltage which will not Trigger any Device, V . . . . . . . . . . . . . . . . . . . . . . . . . 0.25V GDElectrical Characteristics (Contd): (Maximum values T = +125C unless otherwise specified) J Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase (DC Operation), R . . . . . . . . . . . . . . . . . . . . . . . 0.3C/W tnJC Thermal Resistance, Case toHeat Sink, R thC HS (Mounting Surface Smooth, Flat, and Greased) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1C/W 1.227 (31.18) Max (Across Corners) .875 (22.22) Dia (Ceramic) For No. 6 Screw Cathode .280 (7.11) Dia Max Gate (White) 7.500 Cathode 6.260 (190.5) (Red) Max (159.0) Max (Terminals 1 & 2) (Terminal 3) 2.500 (63.5) 1.031 (26.18) Max Dia Max Seating Plane .827 .500 (12.7) Max) (27.0) Max 1/220 UNF Anode