NTE629 & NTE630 Silicon Rectifier Fast Recovery, Dual, Center Tap Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, chop- pers and low RF interference. Features: Low Forward Voltage High Current Capability Fast Switching for High Efficiency High Surge Capacity Glass Passivated Chip Junction Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, V RRM NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Working Peak Reverse Voltage, V RWM NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V DC Blocking Voltage, V R NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS Reverse Voltage, V R(RMS) NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V Average Rectifier Forward Current (Rated V , T = +150C), I R C F(AV) Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A NonRepetitive Peak Surge Current, I FSM (8.3ms Single half SineWave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . 250A Operating Junction Temperature Range (Reverse Voltage Applied), T . . . . . . . . . . 65 to +175C J Storage Temperature Range (Reverse Voltage Applied), T . . . . . . . . . . . . . . . . . . . 65 to +175C stgElectrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Instantaneous Forward Voltage V I = 8A 1.3 V F F Instantaneous Reverse Current I At Rated V , T = +25C 10 A R R C At Rated V , T = +100C 250 A R C Junction Capacitance C Note 1 50 pF P Reverse Recovery Time NTE629 t I = 0.5A, I = 1A, i = 0.25A 150 ns rr F R rr NTE630 250 ns Note 1. Measured at 1MHz and applied reverse voltage of 4V. .147 (3.75) Dia Max .185 (4.7) .110 (2.79) .392 .054 (1.38) (9.95) .245 (6.22) K .608 (15.42) Max .040 (1.02) AAK .500 (12.7) Min .100 (52.54) .018 (0.48)