NTE6400 & NTE6400A Unijunction Transistor TO39 Type Package Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable N type negative resistance characteristic over a wide temperature range. A stable peak point volt- age, a low peak point current, and a high pulse pulse current make these devices useful in oscillators, timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conven- tional silicon or germanium transistors. These devices are intended for applications where circuit economy is of primary importance. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A RMS Power Dissipation, P D Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9mW/C RMS Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA E Peak Emitter Current (T = +150C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A J E(peak) Emitter Reverse Voltage (T = +150C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V J Interbase Voltage, V BB NTE6400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V NTE6400A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Operating Temperature Range, T opr Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +140C Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16C/mW thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Intrinsic Standoff Ratio V = 10V, Note 1 BB NTE6400 0.4 0.80 NTE6400A 0.54 0.67 Interbase Resistance R V = 3V, I = 0, Note 1 4 12 k BBO BB E Modulated Interbase Current I V = 10V, I = 50mA 6.8 30 mA B2(MOD) BB E Emitter Reverse Current I V = 30V, I = 0 A EO B2E B1 NTE6400 12 NTE6400A 1 Peak Point Emitter Current I V = 25V 25 A P BB Valley Point Current I 8 mA V = 20V, R = 100 V BB B2 BaseOne Peak Pulse Voltage V 3 V OB1 Rev. 510Note 1. The intristic standoff ratio, , is essentially constant with temperature and interbase volt- age. It is defined by the following equation: 200 V = V + P BB T j Where V = Peak point emitter voltage P V = Interbase voltage BB T = Junction Temperature (Degrees Kelvin) j Note 2. The interbase resistance is nearly ohmic and increases with temperature in a welldefined manner. The temperature coefficient at +25C is approximately 0.8%/C. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia .210 (5.33) Dia Max B2 B1 45 Emitter .031 (.793)