NTE6401 Unijunction Transistor Description: The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: Low Peak Point Current: 5 A (Max) Low Emitter Reverse Current: .005 A (Typ) Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Power Dissipation (Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW D RMS Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA E(RMS) Peak Pulse Emitter Current (Note 2), i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A E Emitter Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V B2E Interbase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V B2B1 Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Note 1 Derate 3mW/C increase in ambient temperature. The total power dissipation (available power to Emitter and BaseTwo) must be limited by the external circuitry. Note 2 Capacitor discharge 10 F or less, 30 volts or less Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Intrinsic Standoff Ratio V = 10V, Note 3 0.56 0.75 B2B1 Interbase Resistance r V = 3V, I = 0 4.7 7.0 9.1 k BB B2B1 E Interbase Resistance Temperature ar 0.1 0.9 %/C BB Coefficient Note 3. Intrinsic standoff ratio, is defined by equation: = V V P F V B2B1 where V = Peak Point Emitter Voltage P V = Interbase Voltage B2B1 V = Emitter to BaseOne Junction Diode Drop ( 0.45V 10 A) FElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Emitter Saturation Voltage V V = 10V, I = 50mA, Note 4 3.5 V EB1(sat) B2B1 E Modulated Interbase Current I V = 10V, I = 50mA 15 mA B2(mod) B2B1 E Emitter Reverse Current I V = 30V, I = 0 0.005 12 A EB20 B2E B1 Peak Point Emitter Current I V = 25V 1 5 A P B2B1 Valley Point Current I V = 20V, R = 100 4 6 mA V B2B1 B2 BaseOne Peak Pulse Voltage V 3 5 V OB1 Note 4. Use pulse techniques: Pulse Width ~ 300 s, duty cycle 2% to avoid internal heating due to interbase modulation which may result in erroneous readings. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Base 1 Emitter 45 Base 2/Case .041 (1.05)