X-On Electronics has gained recognition as a prominent supplier of NTGS3443T1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTGS3443T1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTGS3443T1G ON Semiconductor

Hot NTGS3443T1G electronic component of ON Semiconductor
NTGS3443T1G ON Semiconductor
NTGS3443T1G MOSFETs
NTGS3443T1G  Semiconductors

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Part No. NTGS3443T1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20V 2A P-Channel
Datasheet: NTGS3443T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4752 ea
Line Total: USD 2.38 
Availability - 2910
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2972
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 348
Multiples : 1
348 : USD 0.7475
471 : USD 0.5525
476 : USD 0.547
664 : USD 0.392
675 : USD 0.3857
880 : USD 0.2956
1039 : USD 0.2504
3000 : USD 0.1804

5820
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.1786
6000 : USD 0.1769
9000 : USD 0.1763
15000 : USD 0.1755
21000 : USD 0.1711
30000 : USD 0.1669

2910
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ : 5
Multiples : 5
5 : USD 0.4752
50 : USD 0.3716
150 : USD 0.2209
500 : USD 0.1835
3000 : USD 0.1669
6000 : USD 0.1567

20969
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.655
10 : USD 0.4875
100 : USD 0.3128
500 : USD 0.2354
1000 : USD 0.209
3000 : USD 0.1683
6000 : USD 0.1661
9000 : USD 0.165
24000 : USD 0.1595

2972
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 476
Multiples : 1
476 : USD 0.547
664 : USD 0.392
675 : USD 0.3857
880 : USD 0.2956
1039 : USD 0.2504
3000 : USD 0.1804

2910
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.187
9000 : USD 0.1821

2658
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 1839
Multiples : 1
1839 : USD 0.255
10000 : USD 0.2274
100000 : USD 0.1905

2260
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 590
Multiples : 1
590 : USD 0.4407
725 : USD 0.3588
1000 : USD 0.2834

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
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We are delighted to provide the NTGS3443T1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTGS3443T1G and other electronic components in the MOSFETs category and beyond.

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NTGS3443, NVGS3443 Power MOSFET 4.4 Amps, 20 Volts PChannel TSOP6 NTGS3443, NVGS3443 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Notes 4 & 5) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 10 A) 20 GS D Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 20 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 20 Vdc, T = 70C) 5.0 GS DS J GateBody Leakage Current I nAdc GSS (V = 12 Vdc, V = 0 Vdc) 100 GS DS GateBody Leakage Current I nAdc GSS (V = +12 Vdc, V = 0 Vdc) 100 GS DS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) (V = V , I = 250 Adc) 0.60 0.95 1.50 DS GS D Static DrainSource OnState Resistance R DS(on) (V = 4.5 Vdc, I = 4.4 Adc) 0.058 0.065 GS D (V = 2.7 Vdc, I = 3.7 Adc) 0.082 0.090 GS D (V = 2.5 Vdc, I = 3.5 Adc) 0.092 0.100 GS D Forward Transconductance g mhos FS (V = 10 Vdc, I = 4.4 Adc) 8.8 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 565 pF iss (V = 5.0 Vdc, V = 0 Vdc, DS GS Output Capacitance C 320 pF oss f = 1.0 MHz) Reverse Transfer Capacitance C 120 pF rss SWITCHING CHARACTERISTICS TurnOn Delay Time t 10 25 ns d(on) Rise Time t 18 45 ns r (V = 20 Vdc, I = 1.0 Adc, DD D V = 4.5 Vdc, R = 6.0 ) GS g Turn Off Delay Time t 30 50 ns d(off) Fall Time t 31 50 ns f Total Gate Charge Q 7.5 15 nC tot (V = 10 Vdc, V = 4.5 Vdc, DS GS GateSource Charge Q 1.4 nC gs I = 4.4 Adc) D GateDrain Charge Q 2.9 nC gd BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I = 1.7 Adc, V = 0 Vdc) V 0.83 1.2 Vdc S GS SD Reverse Recovery Time (I = 1.7 Adc, dI /dt = 100 A/ s) t 30 ns S S rr 4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge are mandatory.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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