Product Information

AFT05MS003NT1

AFT05MS003NT1 electronic component of NXP

Datasheet
RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 5.4399
10 : USD 1.9554
25 : USD 1.8451
100 : USD 1.5743
500 : USD 1.3938
N/A

Obsolete
     
Manufacturer
NXP
Product Category
RF MOSFET Transistors
RoHS - XON
Y Icon ROHS
Transistor Polarity
N - Channel
Technology
Si
Id - Continuous Drain Current
2.6 A
Vds - Drain-Source Breakdown Voltage
- 500 mV , + 30 V
Operating Frequency
1.8 MHz to 941 MHz
Gain
20.8 Db
Output Power
3.2 W
Pd - Power Dissipation
30.5 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Mounting Style
Smd/Smt
Package / Case
SOT - 89 - 3
Packaging
Reel
Vgs - Gate-Source Voltage
- 6 v , + 12 V
Type
Rf Power Mosfet
Brand
Nxp / Freescale
Number Of Channels
1 Channel
Factory Pack Quantity :
1000
Vgs Th - Gate-Source Threshold Voltage
2.2 V
Cnhts
8541290000
Hts Code
8541290075
Mxhts
85412999
Product Type
Rf Mosfet Transistors
Subcategory
Mosfets
Taric
8541290000
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DocumentNumber:AFT05MS003N FreescaleSemiconductor Rev. 0, 8/2015 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFT05MS003N Enhancement--ModeLateral MOSFET Designedforhandheldtwo--wayradioapplications withfrequencies from1.8 to 941 MHz. The highgain, ruggedness and widebandperformance of this device make it ideal for large--signal, common--source amplifier applications in 1.8941MHz,3W,7.5V handheldradioequipment. WIDEBAND Wideband Performance (7.5 Vdc, T =25 C, CW) AIRFASTRFPOWER A LDMOSTRANSISTOR Frequency P G P in ps D out (MHz) (dBm) (dB) (%) (W) (1,4) 136174 17.8 17.1 67.1 3.2 (2,4) 350520 20.0 15.1 73.0 3.2 NarrowbandPerformance (7.5Vdc,T =25 C,CW) A Frequency G P ps D out (MHz) (dB) (%) (W) SOT--89 (3) 520 20.8 68.3 3.0 LoadMismatch/Ruggedness Frequency Signal P Test in Source (MHz) Type VSWR (dBm) Voltage Result 2 (3) 520 CW >65:1atall 21.1 9.0 NoDevice PhaseAngles Degradation 1. Measuredin136174 MHz VHFbroadbandreferencecircuit. 1 23 2. Measuredin350520MHz UHFbroadbandreferencecircuit. 3. Measuredin520MHz narrowbandproductiontestcircuit. Gate Source Drain 4. Thevaluesshownarethecenterbandperformancenumbersacrosstheindicated frequency range. Figure1.PinConnections Features Characterizedfor Operationfrom 1.8to941MHz UnmatchedInput andOutput AllowingWideFrequency RangeUtilization IntegratedESD Protection IntegratedStability Enhancements Wideband FullPower Across theBand ExceptionalThermalPerformance ExtremeRuggedness TypicalApplications Output StageVHF BandHandheldRadio Output StageUHF BandHandheldRadio Output Stagefor 700900MHz HandheldRadio Smart Metering Driver for 1.8941MHz Applications FreescaleSemiconductor, Inc., 2015. All rights reserved. AFT05MS003N RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+30 Vdc DSS Gate--SourceVoltage V 6.0,+12 Vdc GS OperatingVoltage V 12.5,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+150 C J TotalDeviceDissipation T =25 C P 30.5 W C D Derateabove25 C 0.24 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 4.1 C/W JC CaseTemperature79C,3W CW,7.5Vdc,I =100mA,520MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C,passes 1000V MachineModel(perEIA/JESD22--A115) A,passes 100V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 1 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 2 Adc DSS (V =30Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =7.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.8 2.2 2.6 Vdc GS(th) (V =10Vdc,I =67 Adc) DS D Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =700mAdc) GS D ForwardTransconductance g 3.1 S fs (V =7.5Vdc,I =2.6Adc) DS D DynamicCharacteristics ReverseTransferCapacitance C 1.1 pF rss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 23.2 pF oss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 38.5 pF iss (V =7.5Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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