DocumentNumber:AFT05MS004N FreescaleSemiconductor Rev. 0, 7/2014 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFT05MS004NT1 Enhancement--ModeLateral MOSFET Designed for handheld two--way radio applications with frequencies from 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis device make it ideal for large--signal, common--source amplifier applications in 136941MHz,4W,7.5V handheldradioequipment. WIDEBAND NarrowbandPerformance (7.5Vdc,T =25 C,CW) A RFPOWERLDMOSTRANSISTOR Frequency G P ps D out (MHz) (dB) (%) (W) (1) 520 20.9 74.9 4.9 Wideband Performance (7.5 Vdc, T =25 C, CW) A Frequency P G P in ps D out (MHz) (W) (dB) (%) (W) SOT--89 (2) 136174 0.10 17.8 61.8 6.1 (3) 350520 0.12 15.4 49.4 4.2 LoadMismatch/Ruggedness Frequency Signal P Test Source in (MHz) Type VSWR (W) Voltage Result 2 (3) 435 CW >65:1 at all 0.24 9.0 NoDevice PhaseAngles (3dB Overdrive) Degradation 1. Measuredin520MHz narrowbandtest circuit. 2. Measuredin136174MHz VHFbroadbandreferencecircuit. 1 23 3. Measuredin350520MHz UHFbroadbandreference circuit. Gate Source Drain Features Figure1.PinConnections Characterizedfor Operationfrom 136to941MHz UnmatchedInput andOutput AllowingWideFrequency RangeUtilization IntegratedESD Protection IntegratedStability Enhancements Wideband Full Power Across theBand Exceptional Thermal Performance ExtremeRuggedness InTapeandReel. T1Suffix = 1,000Units, 12mm TapeWidth, 7--inchReel. TypicalApplications Output StageVHF BandHandheldRadio Output StageUHF BandHandheldRadio Output Stagefor 700800MHz HandheldRadio Driver for 101000MHz Applications FreescaleSemiconductor, Inc., 2014. All rights reserved. AFT05MS004NT1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5,+30 Vdc DSS Gate--SourceVoltage V 6.0,+12 Vdc GS Operating Voltage V 12.5,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+150 C J TotalDeviceDissipation T =25 C P 28 W C D Derateabove25 C 0.23 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 4.4 C/W JC CaseTemperature79C,4.0W CW,7.5Vdc,I =100mA,520MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C,passes 1000V MachineModel(perEIA/JESD22--A115) A,passes 100V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 1 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =30Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =7.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.7 2.2 2.5 Vdc GS(th) (V =10Vdc,I =67 Adc) DS D Drain--SourceOn--Voltage V .22 Vdc DS(on) (V =10Vdc,I =700mAdc) GS D ForwardTransconductance g 4.0 S fs (V =7.5Vdc,I =4.0Adc) DS D DynamicCharacteristics ReverseTransferCapacitance C 1.63 pF rss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 34.8 pF oss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 57.6 pF iss (V =7.5Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat