Product Information

BF909R,215

BF909R,215 electronic component of NXP

Datasheet
Transistors RF MOSFET Dual N-Channel 7V 40mA 200mW
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.5274
10 : USD 0.4359
100 : USD 0.2661
1000 : USD 0.2058
3000 : USD 0.1843
9000 : USD 0.1843
24000 : USD 0.1821
45000 : USD 0.1775
99000 : USD 0.1708
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Package Case
Brand
Drain Source Breakdown Voltage
Gate Source Breakdown Voltage
Factory Pack Quantity :
Rohs Mouser
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BF909 BF909R N-channel dual gate MOS-FETs Rev. 02 19 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication N-channel dual gate MOS-FETs BF909 BF909R FEATURES transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to Specially designed for use at 5 V supply voltage ensure good cross-modulation performance during AGC. High forward transfer admittance Short channel transistor with high forward transfer CAUTION admittance to input capacitance ratio The device is supplied in an antistatic package. The Low noise gain controlled amplifier up to 1 GHz gate-source input must be protected against static Superior cross-modulation performance during AGC. discharge during transport or handling. APPLICATIONS PINNING VHF and UHF applications with 3 to 7 V supply voltage PIN SYMBOL DESCRIPTION such as television tuners and professional 1 s, b source communications equipment. 2 d drain 3g gate 2 2 DESCRIPTION 4g gate 1 1 Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The d d handbook, halfpage handbook, halfpage 34 43 g g 2 2 g g 1 1 2 1 1 2 s,b s,b Top view MAM125 - 1 Top view MAM124 BF909 marking code: %M3. BF909R marking code: %M4. Fig.1 Simplified outline (SOT143) and symbol. Fig.2 Simplified outline (SOT143R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage -- 7V DS I drain current -- 40 mA D P total power dissipation -- 200 mW tot T operating junction temperature -- 150 C j y forward transfer admittance 36 43 50 mS fs C input capacitance at gate 1 - 3.6 4.3 pF ig1-s C reverse transfer capacitance f = 1 MHz - 35 50 fF rs F noise gure f = 800 MHz - 2 2.8 dB Rev. 02 - 19 November 2007 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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