Product Information

BF1210,115

BF1210,115 electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 6V 0.03A 6-Pin TSSOP T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

42: USD 0.8598 ea
Line Total: USD 36.11

0 - Global Stock
MOQ: 42  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Pd - Power Dissipation
Packaging
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Channel Type
Screening Level
Channel Mode
Rad Hardened
Application
Reverse Capacitance Typ
Noise Figure Max
Drain Source Voltage Max
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Additional Infomation About Product

BF1210 Dual N-channel dual gate MOSFET Rev. 01 25 October 2006 Product data sheet 1. Product prole 1.1 General description The BF1210 is a combination of two dual gate MOSFET ampliers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Two low noise gain controlled ampliers in a single package both with a partly integrated bias n Superior cross modulation performance during AGC n High forward transfer admittance n High forward transfer admittance to input capacitance ratio 1.3 Applications n Gain controlled low noise ampliers for VHF and UHF applications with 5 V supply voltage u digital and analog television tuners u professional communication equipmentBF1210 NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specied. Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage - - 6 V DS I drain current DC - - 30 mA D 1 P total power dissipation T 107 C - - 180 mW tot sp y forward transfer admittance amplier A I =19mA 26 31 41 mS fs D amplier B I =13mA 28 33 43 mS D 2 C input capacitance at gate1 f = 100 MHz iss(G1) amplier A - 2.2 2.7 pF amplier B - 1.9 2.4 pF 2 C reverse transfer capacitance f = 100 MHz -20 - fF rss NF noise gure amplier A f = 400 MHz - 0.9 1.5 dB amplier B f = 800 MHz - 1.2 1.9 dB Xmod cross modulation input level for k = 1 % at 40 dB AGC amplier A 100 105 - dBV amplier B 100 103 - dBV T junction temperature - - 150 C j 1 T is the temperature at the soldering point of the source lead. sp 2 Calculated from S-parameters. 2. Pinning information Table 2. Discrete pinning Pin Description Simplied outline Symbol 1 gate1 (AMP A) 6 5 4 AMP A 2 gate2 G1A DA 3 gate1 (AMP B) 4 drain (AMP B) G2 S 132 5 source G1B DB 6 drain (AMP A) AMP B sym119 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1210 - plastic surface-mounted package 6 leads SOT363 BF1210 1 NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 25 October 2006 2 of 21

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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