Product Information

BF1211R,215

BF1211R,215 electronic component of NXP

Datasheet
Transistors RF MOSFET TAPE-7 MOS-RFSS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.5241
10 : USD 0.429
100 : USD 0.2617
1000 : USD 0.2031
3000 : USD 0.1809
9000 : USD 0.1809
24000 : USD 0.1785
45000 : USD 0.1739
99000 : USD 0.1681
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Brand
Gate-Source Breakdown Voltage
Product Type
Factory Pack Quantity :
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF1211 BF1211R BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16NXP Semiconductors Product specification BF1211 BF1211R N-channel dual-gate MOS-FETs BF1211WR FEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1source Low noise gain controlled amplifier 2drain Excellent low frequency noise performance 3gate2 Partly internal self-biasing circuit to ensure good 4gate1 cross-modulation performance during AGC and good DC stabilization. handbook, 2 columns 4 3 APPLICATIONS Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. 12 Top view MSB014 DESCRIPTION BF1211 marking code: LFp Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes Fig.1 Simplified outline (SOT143B). between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. handbook, 2 columns 3 4 3 4 handbook, halfpage 2 1 21 Top view MSB035 Top view MSB842 BF1211R marking code: LHp BF1211WR marking code: MK Fig.2 Simplified outline (SOT143R). Fig.3 Simplified outline (SOT343R). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 6V DS I drain current 30 mA D P total power dissipation 180 mW tot y forward transfer admittance 25 30 40 mS fs C input capacitance at gate 1 2.1 2.6 pF ig1-ss C reverse transfer capacitance f = 1 MHz 15 30 fF rss F noise figure f = 400 MHz 0.9 1.6 dB X cross-modulation input level for k = 1% at 100 105 dBV mod 40 dB AGC T junction temperature 150 C j 2003 Dec 16 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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