BFU520YX NXP

BFU520YX electronic component of NXP
BFU520YX NXP
BFU520YX RF Bipolar Transistors
BFU520YX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BFU520YX RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU520YX RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

Part No.BFU520YX
Manufacturer:NXP
Category:RF Bipolar Transistors
Description:NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Datasheet:BFU520YX Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
N/A

Obsolete

Availability0
MOQ : 3000
Multiples : 1
QtyUnit Price
3000$ 1.0833
300$ 1.0472
1500$ 0.9236
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5277
10$ 1.2328
30$ 1.0479
100$ 0.8585
500$ 0.7746
1000$ 0.738
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.9125
10$ 1.146
100$ 0.6897
500$ 0.5522
1000$ 0.5082
3000$ 0.418
N/A

Obsolete
   
Manufacturer
Product Category
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Rohs Mouser
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Operating Temperature Range
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFU520YX from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU520YX and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.65 dB at 900 MHz min Maximum stable gain 19 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband differential amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 5 30 mA I C 1 total power dissipation T 87 C -- 450 mW P tot sp DC current gain I =5 mA V =8V 60 95 200 h FE C CE collector capacitance V =8V f = 1MHz - 0.48 - pF C c CB transition frequency I =10 mA V = 8 V f = 900 MHz - 10 - GHz f T C CEBFU520Y NXP Semiconductors Dual NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =5 mA V = 8 V f = 900 MHz -19 - dB p(max) C CE NF minimum noise figure I =1 mA V = 8 V f = 900 MHz = -0.65- dB min C CE S opt P output power at 1 dB gain I =10 mA V =8V Z =Z =50 -7.0 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1 base1 2emitter1 3 collector2 4 base2 5emitter2 DDD 6 collector1 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU520Y - plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking Type number Marking Description BFU520Y WB* * = t : made in Malaysia * = w : made in China BFU520Y All information provided in this document is subject to legal disclaimers. NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 20 February 2014 2 of 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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