X-On Electronics has gained recognition as a prominent supplier of MT3S111(TE85L,F) RF BIPOLAR TRANSISTORS across the USA, India, Europe, Australia, and various other global locations. MT3S111(TE85L,F) RF BIPOLAR TRANSISTORS are a product manufactured by Toshiba. We provide cost-effective solutions for RF BIPOLAR TRANSISTORS, ensuring timely deliveries around the world.

MT3S111(TE85L,F) Toshiba

MT3S111(TE85L,F) electronic component of Toshiba
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Part No.MT3S111(TE85L,F)
Manufacturer: Toshiba
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors RF Bipolar Transistor .1A 700mW
Datasheet: MT3S111(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6118 ea
Line Total: USD 0.61

Availability - 5701
Ships to you between
Thu. 27 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11644 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 0.9389
10 : USD 0.7977
100 : USD 0.5442
500 : USD 0.4555
1000 : USD 0.4073

5701 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.6118
10 : USD 0.4922
100 : USD 0.3899
500 : USD 0.3404
1000 : USD 0.2875
3000 : USD 0.2657
9000 : USD 0.261
24000 : USD 0.2541

   
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RoHS - XON
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Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
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Brand
Maximum Dc Collector Current
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We are delighted to provide the MT3S111(TE85L,F) from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT3S111(TE85L,F) and other electronic components in the RF Bipolar Transistors category and beyond.

MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features Low-Noise Figure: NF=0.9 dB (typ.) ( f=1 GHz) 2 High Gain: S =12 dB (typ.) ( f=1 GHz) 21e Marking R 5 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Symbol Rating Unit Collector-emitter voltage V 13 V CES Collector-emitter voltage V 6 V CEO Emitter-base voltage V 0.6 V EBO Collector-current I 100 mA C Base-current I 10 mA B Collector power dissipation P 160 mW C Collector power dissipation P (Note 1) 700 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2007-12 1 2014-09-26 MT3S111 Microwave Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency f V =5 V, I =30 mA 9 11.5 GHz T CE C 2 S (1) V =5 V, I =30 mA, f=500 MHz 17.5 dB 21e CE C Insertion gain 2 S (2) V =5 V, I =30 mA, f=1 GHz 10 12 dB 21e CE C NF(1) V =5 V, I =30 mA, f=500 MHz 0.65 dB CE C Noise figure NF(2) V =5 V, I =30 mA, f=1 GHz 0.9 1.2 dB CE C rd V =5 V, I =30 mA, f=500 MHz, CE C 3 order intermodulation distortion output OIP 32 dBmW 3 intercept point f=1 MHz Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V =5 V, I =0 A 0.1 A CBO CB E DC current gain h V =5 V, I =30 mA 200 400 FE CE C Output capacitance C V =5 V, I =0 A, f=1 MHz 1.45 pF ob CB E Reverse transfer capacitance C V =5 V, I =0 A, f=1 MHz (Note 2) 0.9 1.2 pF re CB E Note 2: C is measured using a 3-terminal method with capacitance bridge re Caution: This device is sensitive to electrostatic discharge due to the high frequency transistor process of f =60 GHz class which is used for this product. T Please make tool and equipment earthed enough when you handle. 2 2014-09-26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TS4

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