BFU790F,115 NXP

BFU790F NPN wideband silicon germanium RF transistor Rev. 1 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high linearity microwave transistor 110 GHz f silicon germanium technology T High maximum output power at 1 dB compression 20 dBm at 1.8 GHz 1.3 Applications High linearity applications Medium output power applications Wi-Fi / WLAN / WiMAX ZigBee LTE, cellular, UMTSBFU790F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 2.8 V CEO V emitter-base voltage open collector - - 1.0 V EBO I collector current - 50 100 mA C 1 P total power dissipation T 90 C - - 234 mW tot sp h DC current gain I =10mA V =2V 235 410 585 FE C CE T =25 C j C collector-base V =2V f=1MHz - 514 - fF CBS CB capacitance f transition frequency I = 100 mA V =1V -25 - GHz T C CE f= 2GHz T =25 C amb IP3 output third-order I =30mA V =2.5 V -33 - dBm O C CE intercept point f= 1.8GHz T =25 C amb 2 G maximum power gain I =85mA V =1V - 19.5 - dB p(max) C CE f= 1.8GHz T =25 C amb NF noise figure I =20mA V =2V -0.40 - dB C CE = f = 1.8 GHz S opt T =25 C amb P output power at 1 dB I =60mA V =2.5 V -20 - dBm L(1dB) C CE gain compression Z =Z =50 S L f= 1.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU790F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU790F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 22 April 2011 2 of 12