BFU910FX NXP

BFU910F NPN wideband silicon germanium RF transistor Rev. 2 16 January 2015 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz. 1.2 Features and benefits Low noise high gain microwave transistor Minimum noise figure (NF ) = 0.65 dB at 12 GHz min Maximum stable gain 14.2 dB at 12 GHz 90 GHz f SiGe technology T 1.3 Applications K band DBS Low-Noise blocks u 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage R 1 M -2.0 3.0 V CE BE I collector current - 10 15 mA C 1 P total power dissipation T 90 C -- 300mW tot sp h DC current gain I =6 mA V = 2 V - 1900 - FE C CE C collector-base capacitance V =2V f = 1MHz - 35 - fF CBS CB f transition frequency I =6 mA V =2V - 90 - GHz T C CE MSG maximum stable gain I =6 mA V =2V -14.2- dB C CE f=12 GHz NF minimum noise figure I =6 mA V =2V -0.65- dB min C CE f = 12 GHz = S opt G associated gain I =6 mA V =2V -13.0- dB ass C CE f = 12 GHz = S opt P output power at 1 dB I =10 mA V =2V -2 - dBm L(1dB) C CE gain compression f = 12 GHz Z =Z =50 S L 1 T is the temperature at the solder point of the emitter lead. spBFU910F NXP Semiconductors NPN wideband silicon germanium RF transistor 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 2base 3emitter 4 collector E PE 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU910F - plastic surface-mounted flat pack package reverse pinning SOT343F 4 leads 4. Marking Table 4. Marking Type number Marking Description BFU910F F1* * = t : made in Malaysia * = w : made in China 5. Design support Table 5. Available design support Download from the BFU910F product information page on