BGU8007,115 NXP

BGU8007,115 electronic component of NXP
BGU8007,115 NXP
BGU8007,115 RF Amplifier
BGU8007,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BGU8007,115 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. BGU8007,115 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No.BGU8007,115
Manufacturer:NXP
Category:RF Amplifier
Description:RF Amplifier Low Noise Amplifier
Datasheet:BGU8007,115 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
N/A

Obsolete

Availability0
MOQ : 32
Multiples : 32
QtyUnit Price
32$ 0.9095
100$ 0.5029
250$ 0.4532
500$ 0.4145
1500$ 0.3648
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.638
10$ 0.7409
100$ 0.4968
500$ 0.4104
1000$ 0.3588
5000$ 0.3432
10000$ 0.3432
25000$ 0.3396
50000$ 0.33
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Supply Voltage - Max
Supply Voltage - Min
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BGU8007,115 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGU8007,115 and other electronic components in the RF Amplifier category and beyond.

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BGU8007 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 2 30 March 2012 Product data sheet 1. Product profile 1.1 General description The BGU8007 is a Low Noise Amplifier (LNA) for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU8007 requires only one external matching inductor and one external decoupling capacitor. The BGU8007 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels it delivers 19 dB gain at a noise figure of 0.75 dB. During high jamming power levels, resulting for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Covers full GNSS L1 band, from 1559 MHz to 1610 MHz Noise figure (NF) = 0.75 dB Excellent low NF < 1 dB in the presence of strong jamming signals Gain 19 dB High input 1 dB compression point P of 11 dBm i(1dB) High out of band IP3 of 4 dBm i Supply voltage 1.5 V to 2.5 V Power-down mode current consumption < 1 A Optimized performance at low supply current of 4.6 mA Integrated temperature stabilized bias for easy design Requires only one input matching inductor and one supply decoupling capacitor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Small 6-pin leadless package 1 mm 1.45 mm 0.5 mm 110 GHz transit frequency - SiGe:C technologyBGU8007 NXP Semiconductors SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass 1.3 Applications LNA for GPS, GLONASS, Galileo and Compass (BeiDou) in smart phones, feature phones, tablet PCs, Personal Navigation Devices, Digital Still Cameras, Digital Video Cameras, RF Front End modules, complete GPS chipset modules and theft protection (laptop, ATM) 1.4 Quick reference data Table 1. Quick reference data f = 1559 MHz to 1610 MHz V = 1.8 V P < 40 dBm T =25 C input matched to 50 using CC i amb a 5.6 nH inductor unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V supply voltage RF input AC coupled 1.5 - 2.5 V CC I supply current V 0.8 V CC ENABLE P < 40 dBm 3.3 4.6 5.9 mA i P = 20 dBm 8.4 11.9 14.7 mA i G power gain P < 40 dBm, no jammer 17.0 19.0 20.5 dB p i P = 20 dBm, no jammer 18.5 20.5 21.5 dB i 1 NF noise figure P < 40 dBm, no jammer - 0.75 1.1 dB i 2 P < 40 dBm, no jammer - 0.80 1.2 dB i 2 P = 20 dBm, no jammer -1.01.4dB i P input power at 1 dB f = 1559 MHz to 1610 MHz i(1dB) gain compression V =1.5 V 15 12 - dBm CC V =1.8 V 14 11 - dBm CC V =2.2 V 13 10 - dBm CC IP3 input third-order intercept point f = 1.575 GHz i 3 V =1.5 V 14 - dBm CC 3 V =1.8 V 14 - dBm CC 3 V =2.2 V 25 - dBm CC 1 PCB losses are subtracted. 2 Including PCB losses. 3 f = 1713 MHz f = 1851 MHz P =P = 30 dBm. 1 2 1 2 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1GND 6 5 4 4 5 2GND 3RF IN 3 6 4V CC 21 5 ENABLE sym129 1 2 3 6RF OUT Transparent top view BGU8007 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 30 March 2012 2 of 19

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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