BLF647,112 NXP

BLF647,112 electronic component of NXP Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BLF647,112 across the USA, India, Europe, Australia, and various other global locations. BLF647,112 are a product manufactured by NXP. We provide cost-effective solutions for BLF647,112, ensuring timely deliveries around the world.

Part No. BLF647,112
Manufacturer: NXP
Category: Unclassified
Description: BLF647,112
NPN bipolar transistor optimized for switch-mode power supply applications.
Datasheet:
Price (USD)
1: USD 199.9028 ea
Line Total: USD 199.9 
Availability : 0
  
QtyUnit Price
1$ 199.9028
2$ 174.915
15$ 166.5857

Availability 0
Ship by Wed. 24 Sep to Tue. 30 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 199.9028
2$ 174.915
15$ 166.5857

   
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Product Category
RoHS - XON
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We are delighted to provide the BLF647,112 from our NXP manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF647,112 and other electronic components in the NXP manufacturer and beyond.

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BLF647,112 is an N channel enhancement mode, vertical double diffused MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high voltage, high speed switching and active OR-ing applications. It has a drain-to-source blocking voltage of 900 V and a drain current rating of 8.75 A. The device has low gate crrent, fast switching speed and high ruggedness. It provides an over-temperature shutdown expressed as the Drain-Source on-state RDS(on). The maximum RDS(on) is only 0.13 O, reducing the power loss while increasing system efficiency.

Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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