BLF647,112 is an N channel enhancement mode, vertical double diffused MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high voltage, high speed switching and active OR-ing applications. It has a drain-to-source blocking voltage of 900 V and a drain current rating of 8.75 A. The device has low gate crrent, fast switching speed and high ruggedness. It provides an over-temperature shutdown expressed as the Drain-Source on-state RDS(on). The maximum RDS(on) is only 0.13 O, reducing the power loss while increasing system efficiency.