BLF6G10L-260PRN,112 is a N-channel enhancement mode Field Effect Transistor (FET) from NXP. It is a high-speed power MOSFET with low on-resistance (Rdson) and low gate charge (Qg). It is designed for high frequency switching applications, such as DC/DC converters, synchronous rectifiers, motor drives, and high-voltage motor solutions. It is designed to achieve very low Rdson, higher switching capacity and excellent noise immunity. BLF6G10L-260PRN,112 has a breakdown voltage of 600 V, a maximum current rating of 230 mA, and a drain-source on-resistance of 12.5 mOhms at 10 V.