Product Information

BF1101WR,115

BF1101WR,115 electronic component of NXP

Datasheet
RF MOSFET Transistors N-CH DUAL GATE 7V
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1847 ea
Line Total: USD 554.1

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3000
Multiples : 1
3000 : USD 0.1847

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF1101 BF1101R BF1101WR N-channel dual-gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1999 Feb 01NXP Semiconductors Product specification BF1101 BF1101R N-channel dual-gate MOS-FETs BF1101WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 3 4 forward transfer admittance to input 1source capacitance ratio 2drain Low noise gain controlled amplifier 3 gate 2 up to 1 GHz 2 1 4 gate 1 Partly internal self-biasing circuit to Top view MSB035 ensure good cross-modulation performance during AGC and good BF1101R marking code: NCp. DC stabilization. Fig.2 Simplified outline APPLICATIONS (SOT143R). VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment. handbook, 2 columns4 3 3 4 , halfpage DESCRIPTION Enhancement type N-channel field-effect transistor with source and 12 21 substrate interconnected. Integrated Top view MSB014 Top view MSB842 diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101 marking code: NDp. BF1101WR marking code: NC. BF1101R and BF1101WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B). (SOT343R). packages respectively. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 7V DS I drain current 30 mA D P total power dissipation 200 mW tot y forward transfer admittance 25 30 mS fs C input capacitance at gate 1 2.2 2.7 pF ig1-ss C reverse transfer capacitance f = 1 MHz 25 35 fF rss F noise figure f = 800 MHz 1.7 2.5 dB X cross-modulation input level for k = 1% at 100 dBV mod 40 dB AGC T operating junction temperature 150 C j CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1999 May 14 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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