BLP7G22-10Z NXP

BLP7G22-10Z electronic component of NXP
BLP7G22-10Z NXP
BLP7G22-10Z RF MOSFET Transistors
BLP7G22-10Z  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BLP7G22-10Z RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLP7G22-10Z RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

Part No. BLP7G22-10Z
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: NXP Semiconductors RF MOSFET Transistors plastic LDMOS power transistor
Datasheet: BLP7G22-10Z Datasheet (PDF)
Price (USD)
1: USD 14.8115 ea
Line Total: USD 14.81 
Availability : 0
  
QtyUnit Price
1$ 14.8115
10$ 13.6299
25$ 13.0582
50$ 12.3493
100$ 11.5031
250$ 10.9649
500$ 10.9649
1000$ 10.843
2500$ 10.1111

Availability 0
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 14.8115
10$ 13.6299
25$ 13.0582
50$ 12.3493
100$ 11.5031
250$ 10.9649
500$ 10.9649
1000$ 10.843
2500$ 10.1111

   
Manufacturer
Product Category
Technology
Id - Continuous Drain Current
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Gain
Maximum Operating Temperature
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Type
Brand
Forward Transconductance Min
Rds On Drain Source Resistance
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Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BLP7G22-10Z from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLP7G22-10Z and other electronic components in the RF MOSFET Transistors category and beyond.

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BLP7G22-10 LDMOS driver transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at T =25 C; I = 110 mA; in a class-AB application circuit. case Dq Test signal f I V P G ACPR Dq DS L(AV) p D 5M (MHz) (mA) (V) (W) (dB) (%) (dBc) Pulsed CW 2700 110 28 2 14.5 26 - [1] 1-carrier W-CDMA 748 110 28 0.7 27.5 13.5 43 748 110 28 2 27.5 25 40 2-carrier W-CDMA 2140 110 28 0.7 17.4 13 51 2140 110 28 2 17.4 25 40 [1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on CCDF; RF performance at V = 28 V; I = 110 mA. DS Dq 1.2 Features and benefits High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications CDMA W-CDMA GSM EDGE MC-GSM LTE WiMAXBLP7G22-10 LDMOS driver transistor 2. Pinning information Table 2. Pinning [1] Pin Description Simplified outline Graphic symbol 1, 6, 7, 12 n.c. 12 7 10, 11 2, 3, 4, 5 gate 8, 9, 10, 11 drain 2, 3 exposed exposed die-pad source die-pad 4, 5 1 6 Transparent top view 8, 9 aaa-007804 [1] To be used in single ended applications only. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLP7G22-10 HVSON12 plastic thermal enhanced very thin small outline SOT1179-2 package; no leads; 12 terminals; body 6 4 0.85 mm 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 150 C j BLP7G22-10#3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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