Product Information

BLF8G27LS-140,118

BLF8G27LS-140,118 electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 65V 3-Pin SOT-502B T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 33.3266 ea
Line Total: USD 3332.66

0 - Global Stock
MOQ: 100  Multiples: 100
Pack Size: 100

Read More Specifications

     
Manufacturer
Product Category
Technology
Id - Continuous Drain Current
Operating Frequency
Gain
Maximum Operating Temperature
Mounting Style
Packaging
Package Case
Type
Brand
Forward Transconductance Min
Rds On Drain Source Resistance
Factory Pack Quantity :
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
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Additional Infomation About Product

BLF8G27LS-140 Power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit. case Test signal f I V P G ACPR Dq DS L(AV) p D (MHz) (mA) (V) (W) (dB) (%) (dBc) [1] 2-carrier W-CDMA 2600 to 2700 1300 32 45 17.4 32 30 [1] 2-carrier W-CDMA 2600 to 2700 1300 28 35 17.0 29 31 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low R providing excellent thermal stability th Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifier for W-CDMA base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency rangeBLF8G27LS-140 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 3 [1] 3source 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF8G27LS-140 - earless flanged ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg [1] T junction temperature - 225 C j [1] Continuous use at maximum temperature will affect the reliability. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =80 C; P = 55 W 0.27 K/W th(j-c) case L BLF8G27LS-140#3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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