BLL1214-35,112 NXP

BLL1214-35 L-band radar LDMOS driver transistor Rev. 2 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication L-band radar LDMOS driver transistor BLL1214-35 FEATURES PINNING - SOT467C High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on mounting base eliminates DC isolators, 3 source, connected to ange reducing common mode inductance. APPLICATIONS 1 L-band radar applications in the 1200 to 1400 MHz frequency range. 3 DESCRIPTION 2 Silicon N-channel enhancement mode lateral D-MOS MBK584 Top view transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange. Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at T =25 C in a common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) Pulsed class-AB 1200 to 1400 36 35 >13 >43 t=1ms =10% LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage - 75 V DS V gate-source voltage - 15 V GS P total power dissipation under RF conditions T 25 C - 110 W tot h T storage temperature - 65 +150 C stg T junction temperature - 200 C j 2002 Sep 27 2