SD57030-01 STMicroelectronics

SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P = 30 W WITH 13 dB gain 945 MHz OUT BeO FREE PACKAGE M250 epoxy sealed ORDER CODE BRANDING SD57030-01 TSD57030-01 DESCRIPTION The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain PIN CONNECTION and broadband performance operating in common 1 source mode at 28 V. It is ideal for base station applications requiring high linearity. 3 2 1. Drain 3. Source 2. Gate ABSOLUTE MAXIMUM RATINGS (T = 25 C) CASE Symbol Parameter Value Unit V Drain-Source Voltage 65 V (BR)DSS V Drain-Gate Voltage (R = 1 M) 65 V DGR GS V Gate-Source Voltage + 20 V GS I Drain Current 4 A D P Power Dissipation ( Tc = 70C) 74 W DISS Tj Max. Operating Junction Temperature 200 C T Storage Temperature -65 to + 200 C STG THERMAL DATA R Junction -Case Thermal Resistance 1.75 C/W th(j-c) March, 24 2003 1/7SD57030-01 ELECTRICAL SPECIFICATION (T = 25C) CASE STATIC Symbol Test Conditions Min. Typ. Max. Unit V V = 0 V I = 10 mA 65 V (BR)DSS GS DS I V = 0 V V = 28 V 1 A DSS GS DS I V = 20 V V = 0 V 1 A GSS GS DS V V = 28 V I = 50 mA 2.0 5.0 V GS(Q) DS D V V = 10 V I = 3 A 1.3 V DS(ON) GS D G V = 10 V I = 3 A 1.8 mho FS DS D C*V = 0 V V = 28 V f = 1 MHz 58 pF ISS GS DS C V = 0 V V = 28 V f = 1 MHz 34 pF OSS GS DS C V = 0 V V = 28 V f = 1 MHz 2.7 pF RSS GS DS Ref. 7143417B DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P V = 28 V I = 50 mA f = 945 MHz 30 W OUT DD DQ G V = 28 V I = 50 mA P = 30 W f = 945 MHz 13 15 dB PS DD DQ OUT V = 28 V I = 50 mA P = 30 W f = 945 MHz 50 60 % D DD DQ OUT Load V = 28 V I = 50 mA P = 28 W f = 945 MHz DD DQ OUT 10:1 VSWR mismatch ALL PHASE ANGLES 2/7