BT1308-600D,412 NXP

BT1308 series D Triacs logic level Rev. 01 26 February 2008 Product data sheet 1. Product prole 1.1 General description Passivated sensitive gate triacs in a SOT54 plastic package 1.2 Features n Sensitive gate n Gate triggering in four quadrants n Direct interfacing to logic level ICs n Direct interfacing to low-power gate drive circuits 1.3 Applications n General purpose switching and phase n Low-power AC fan speed control control 1.4 Quick reference data n V 400 V (BT1308-400D) n I 5mA DRM GT n V 600 V (BT1308-600D) n I 7 mA (T2- G+) DRM GT n I 9A (t=20ms) n I 0.8 A TSM T(RMS) 2. Pinning information Table 1. Pinning Pin Description Simplied outline Graphic symbol 1 main terminal 2 (T2) T2 T1 2 gate (G) G 3 main terminal 1 (T1) sym051 3 2 1 SOT54 (TO-92)BT1308 series D NXP Semiconductors Triacs logic level 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BT1308-400D TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 BT1308-600D 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state voltage BT1308-400D - 400 V DRM BT1308-600D - 600 V I RMS on-state current full sine wave; T 55 C; - 0.8 A T(RMS) lead see Figure 4 and 5 I non-repetitive peak on-state current full sine wave; T =25 C prior to surge; TSM j see Figure 2 and 3 t = 20 ms - 9 A t = 16.7 ms - 10 A 2 2 2 ItI t for fusing t = 10 ms - 0.32 A s p dI /dt rate of rise of on-state current I = 1 A; I = 20 mA; dI /dt = 0.2 A/s T TM G G T2+ G+ - 50 A/s T2+ G- -50 A/s T2- G- -50 A/s T2- G+ - 10 A/s I peak gate current - 1 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.1 W G(AV) T storage temperature - 40 +150 C stg T junction temperature - 125 C j BT1308_SER_D_1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 26 February 2008 2 of 12