Product Information

BT137S-600E/T3

BT137S-600E/T3 electronic component of NXP

Datasheet
SMD TRIAC 600V 8A DPAK / TO-252

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.4646 ea
Line Total: USD 2.46

24 - Global Stock
Ships to you by
Mon. 22 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24 - Global Stock


Ships to you by Mon. 22 Apr

MOQ : 1
Multiples : 1
1 : USD 2.4646
25 : USD 1.2323
50 : USD 1.1091
75 : USD 0.9242
100 : USD 0.8318

     
Manufacturer
Product Category
Holding Current Ih Max
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Packaging
Off State Leakage Current Vdrm Idrm
On State Voltage
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
Factory Pack Quantity :
LoadingGif

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BT137S-600E 4Q Triac 12 June 2014 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT428 (DPAK) surface- mountable plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gateseries triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Direct triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Sensitive gate Surface-mountable package Triggering in all four quadrants 3. Applications General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I non-repetitive peak on- full sine wave; T = 25 C; - - 65 A TSM j(init) state current t = 20 ms; Fig. 4; Fig. 5 p I RMS on-state current full sine wave; T 102 C; Fig. 1; - - 8 A T(RMS) mb Fig. 2; Fig. 3 Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 2.5 10 mA GT D T T = 25 C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; - 4 10 mA D T T = 25 C; Fig. 7 j Scan or click this QR code to view the latest information for this product DPAKNXP Semiconductors BT137S-600E 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V; I = 0.1 A; T2- G-; - 5 10 mA D T T = 25 C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G+; - 11 25 mA D T T = 25 C; Fig. 7 j I holding current V = 12 V; T = 25 C; Fig. 9 - 2.5 20 mA H D j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base; main 2 terminal 2 1 3 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT137S-600E DPAK plastic single-ended surface-mounted package (DPAK); 3 leads SOT428 (one lead cropped) BT137S-600E All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 12 June 2014 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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