BTA420-800CT,127 NXP

BTA420-800CT 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries C triac will commutate the full RMS current at the maximum rated junction temperature (T = 150 C) without the aid of a snubber. It is used in applications wherehigh junction j(max) operating temperature capabilit is required. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High junction operating temperature capability High voltage capability Less sensitive gate for high noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Applications subject to high temperature Heating controls High power motor control High power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 122 C Fig. 1 - - 20 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 200 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 220 A j(init) t = 16.7 ms p T junction temperature - - 150 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 35 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA420-800CT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- - - 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 35 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 40 mA H D j V on-state voltage I = 24 A T = 25 C Fig. 10 - 1.2 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 150 C (V = 67% 1250 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 150 C I = 20 A 16 - - A/ms com D j T(RMS) commutating current dV /dt = 10 V/s gate open circuit com V = 400 V T = 150 C I = 20 A 38 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA420-800CT TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BTA420-800CT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 2 / 13