BUJ100,412 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BUJ100 Silicon Diffused Power Transistor Product specification September 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V Collector-emitter voltage peak value V = 0 V - 700 V CESM BE V Collector-Base voltage (open emitter) - 700 V CBO V Collector-emitter voltage (open base) - 400 V CEO I Collector current (DC) - 1.0 A C I Collector current peak value - 2.0 A CM P Total power dissipation T 25 C - 2 W tot lead V Collector-emitter saturation voltage I = 0.75 A I = 150mA 0.24 1.0 V CEsat C B h I = 0.75 A V = 5 V 14 20 FE C CE t Fall time (Inductive) I = 1.0 A I = 200mA 50 70 ns fi C BON PINNING - TO92 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 2 1 Emitter 3 2 Collector 1 3 Base 32 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Collector to emitter voltage V = 0 V - 700 V CESM BE V Collector to emitter voltage (open base) - 400 V CEO V Collector to base voltage (open emitter) - 700 V CBO I Collector current (DC) - 1.0 A C I Collector current peak value - 2.0 A CM I Base current (DC) - 0.5 A B I Base current peak value - 1.0 A BM P Total power dissipation T 25 C - 2 W tot lead T Storage temperature -65 150 C stg T Junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance - 60 K/W th j-lead junction to lead R Thermal resistance pcb mounted lead length = 4mm 150 - K/W th j-a Junction to ambient September 2018 1 Rev 1.100