Product Information

BUJ100LR,126

BUJ100LR,126 electronic component of NXP

Datasheet
Trans GP BJT NPN 400V 1A 3-Pin SPT Ammo
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1725: USD 0.0491 ea
Line Total: USD 84.7

0 - Global Stock
MOQ: 1725  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Additional Infomation About Product

BUJ100LR NPN power transistor Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V 1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic lighting ballasts Off-line self-oscillating power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current DC see Figure 2 --1 A C P total power T 25 C see Figure 1 --2.1 W tot lead dissipation V collector-emitter peak V=0V --700V CESM BE voltage Static characteristics h DC current gain V =5V I =0.8 A 57.5 20 FE CE C T =25C see Figure 8 lead see Figure 9BUJ100LR NXP Semiconductors NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector 3E emitter B E sym123 3 2 1 SOT54 (TO-92) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ100LR TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 700 V CESM BE V collector-base voltage I = 0 A - 700 V CBO E V collector-emitter voltage I = 0 A - 400 V CEO B I collector current DC see Figure 2 -1 A C I peak collector current - 2 A CM I base current DC - 0.5 A B I peak base current - 1 A BM P total power dissipation T 25 C see Figure 1 -2.1 W tot lead T storage temperature -65 150 C stg T junction temperature - 150 C j V emitter-base voltage I = 0 A I(Emitter) = 10 mA - 9 V EBO C BUJ100LR All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 29 July 2010 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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