X-On Electronics has gained recognition as a prominent supplier of BUK6215-75C,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK6215-75C,118 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK6215-75C,118 NXP

BUK6215-75C,118 electronic component of NXP
Images are for reference only
See Product Specifications
Part No.BUK6215-75C,118
Manufacturer: NXP
Category:MOSFET
Description: MOSFET N-CHAN 75V 57A
Datasheet: BUK6215-75C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500
2500 : USD 0.4655
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.3217
10 : USD 1.1572
100 : USD 0.8929
500 : USD 0.6614
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.9652
10 : USD 0.8008
100 : USD 0.5162
1000 : USD 0.4446
2500 : USD 0.4069
10000 : USD 0.4069
25000 : USD 0.3913
50000 : USD 0.3861
100000 : USD 0.3757
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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BUK6215-75C N-channel TrenchMOS FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Compatable with logic and standard level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Engine management switching Motors, lamps and solenoid control 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j I drain current V =10V T =25C --57 A D GS mb see Figure 1 P total power T =25C see Figure 2 --128W tot mb dissipation Static characteristics R drain-source V =10V I =15A T =25C -12.515 m DSon GS D j on-state resistance see Figure 11BUK6215-75C Nexperia N-channel TrenchMOS FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =57A V 75 V --94 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =60V -18.8-nC GD D DS V =10V see Figure 13 GS see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6215-75C DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK6215-75C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 4 October 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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