X-On Electronics has gained recognition as a prominent supplier of BUK653R7-30C,127 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK653R7-30C,127 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK653R7-30C,127

BUK653R7-30C,127 electronic component of NXP
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Part No.BUK653R7-30C,127
Manufacturer: NXP
Category:MOSFET
Description: Trans MOSFET N-CH 30V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail
Datasheet: BUK653R7-30C,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

31: USD 1.1135 ea
Line Total: USD 34.52

Availability - 0
MOQ: 31  Multiples: 1
Pack Size: 1
     
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BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 3 13 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current V =10V T =25C --100A D GS mb see Figure 1 P total power T = 25 C see Figure 2 --158W tot mb dissipation Static characteristics R drain-source V =10V I =25A -3.3 3.9 m DSon GS D on-state T =25C see Figure 11 j resistanceBUK653R7-30C NXP Semiconductors N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =100 A V 30 V --242mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =24V -20 - nC GD D DS V = 10 V see Figure 13 GS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK653R7-30C TO-220AB plastic single-ended package heatsink mounted SOT78A 1 mounting hole 3-lead TO-220AB BUK653R7-30C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 13 October 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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