BUK653R7-30C,127 NXP

BUK653R7-30C,127 electronic component of NXP
BUK653R7-30C,127 NXP
BUK653R7-30C,127 MOSFETs
BUK653R7-30C,127  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK653R7-30C,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK653R7-30C,127 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK653R7-30C,127
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail
Datasheet: BUK653R7-30C,127 Datasheet (PDF)
Price (USD)
31: USD 1.0792 ea
Line Total: USD 33.46 
Availability : 0
  
QtyUnit Price
31$ 1.0792
   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the BUK653R7-30C,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK653R7-30C,127 and other electronic components in the MOSFETs category and beyond.

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BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 3 13 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current V =10V T =25C --100A D GS mb see Figure 1 P total power T = 25 C see Figure 2 --158W tot mb dissipation Static characteristics R drain-source V =10V I =25A -3.3 3.9 m DSon GS D on-state T =25C see Figure 11 j resistanceBUK653R7-30C NXP Semiconductors N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =100 A V 30 V --242mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =24V -20 - nC GD D DS V = 10 V see Figure 13 GS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK653R7-30C TO-220AB plastic single-ended package heatsink mounted SOT78A 1 mounting hole 3-lead TO-220AB BUK653R7-30C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 13 October 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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