BUK652R1-30C,127 NXP

BUK652R1-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current V =10V T =25C --120A D GS mb see Figure 1 total power T = 25 C see Figure 2 --263W P tot mb dissipation Static characteristics R drain-source V =10V I =25A - 2.02 2.4 m DSon GS D on-state T =25C see Figure 13 j resistance V =5V I =15A -11.113 m GS D T =25C see Figure 14 jBUK652R1-30C NXP Semiconductors N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =120 A V 30 V --0.87J DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =24V -45 -nC GD D DS V = 10 V see Figure 17 GS see Figure 18 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK652R1-30C TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78A hole 3-lead TO-220AB BUK652R1-30C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 16 December 2010 2 of 16