X-On Electronics has gained recognition as a prominent supplier of BUK794R1-40BT,127 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK794R1-40BT,127 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK794R1-40BT,127

BUK794R1-40BT,127 electronic component of NXP
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Part No.BUK794R1-40BT,127
Manufacturer: NXP
Category:MOSFET
Description: Trans MOSFET N-CH 40V 187A Automotive 5-Pin(5+Tab) TO-220 Rail
Datasheet: BUK794R1-40BT,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 5.7226 ea
Line Total: USD 40.06

Availability - 0
MOQ: 7  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Gate-Source Voltage Max
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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BUK794R1-40BT N-channel TrenchPLUS standard level FET Rev. 02 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The devices include TrenchPLUS diodes for temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature Q101 compliant monitoring due to integrated Suitable for thermally demanding temperature sensor environments due to 175 C rating Low conduction losses due to low on-state resistance 1.3 Applications 12 V loads General purpose power switching Electrical Power Assisted Steering Motors, lamps and solenoids (EPAS) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V =10V T =25C 1 --75 A D GS mb see Figure 2 see Figure 3 V =10V T =100 C 1 --75 A GS mb see Figure 2 P total power T = 25 C see Figure 1 - - 272 W tot mb dissipation Static characteristics R drain-source V =10V I =50A -3.4 4.1 m DSon GS D on-state resistance T = 25 C see Figure 7 see j Figure 8 1 Continuous current is limited by package.NXP Semiconductors BUK794R1-40BT N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate da mb 2 A anode 3D drain 4 K cathode g 5S source mb D mounting base connected to 03nm72 sk drain 13245 SOT263B (TO-220) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK794R1-40BT TO-220 plastic single-ended package heatsink mounted 1 mounting hole 5-lead SOT263B TO-220 BUK794R1-40BT 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 16 February 2009 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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NXP SEMI
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