BUK7E11-55B,127 NXP

BUK7E11-55B,127 electronic component of NXP
BUK7E11-55B,127 NXP
BUK7E11-55B,127 MOSFETs
BUK7E11-55B,127  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BUK7E11-55B,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7E11-55B,127 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK7E11-55B,127
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 55V 84A Automotive 3-Pin(3+Tab) I2PAK Rail
Datasheet: BUK7E11-55B,127 Datasheet (PDF)
Price (USD)
8: USD 4.327 ea
Line Total: USD 34.62 
Availability : 0
  
QtyUnit Price
8$ 4.327
   
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We are delighted to provide the BUK7E11-55B,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7E11-55B,127 and other electronic components in the MOSFETs category and beyond.

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BUK7E11-55B N-channel TrenchMOS standard level FET Rev. 3 31 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage 1 I drain current V =10V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --157W tot mb dissipation Static characteristics drain-source V =10V I =25A -9.9 11 m R DSon GS D on-state T =25C see Figure 11 j resistance see Figure 12 I2PAKBUK7E11-55B NXP Semiconductors N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 55 V --173mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -12 - nC GD GS D V =44 V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7E11-55B I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 BUK7E11-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 31 January 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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