BUK7E1R9-40E,127 Nexperia

BUK7E1R9-40E N-channel TrenchMOS standard level FET 19 May 2016 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 324 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.5 1.9 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 32 V V = 10 V - 34.7 - nC GD D DS GS Fig. 13 Fig. 14 1 Continuous current is limited by package.Nexperia BUK7E1R9-40E N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7E1R9-40E I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 7. Marking Table 4. Marking codes Type number Marking code BUK7E1R9-40E BUK7E1R9-40E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage DC T 175 C -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 324 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 120 A D GS mb V = 10 V T = 100 C Fig. 2 1 - 120 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 1198 A DM p mb T storage temperature -55 175 C stg BUK7E1R9-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 May 2016 2 / 13