BUK9509-75A,127 NXP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BUK9509-75A N-channel TrenchMOS logic level FET Rev. 03 22 September 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j I drain current V =5V T =25C see --75 A D GS j Figure 3 see Figure 1 P total power T = 25 C see Figure 2 - - 230 W tot mb dissipation Avalanche ruggedness E non-repetitive I =75 A V 75 V - - 562 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Static characteristics R drain-source V = 4.5 V I =25A --9.95m DSon GS D on-state resistance T =25C j V =5V I =25A -7.6 9 m GS D T = 25 C see Figure 12 j see Figure 15