BUK953R2-40B,127 NXP

BUK953R2-40B,127 electronic component of NXP
BUK953R2-40B,127 NXP
BUK953R2-40B,127 MOSFETs
BUK953R2-40B,127  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BUK953R2-40B,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK953R2-40B,127 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK953R2-40B,127
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 40V 222A Automotive 3-Pin(3+Tab) TO-220AB Rail
Datasheet: BUK953R2-40B,127 Datasheet (PDF)
Price (USD)
8: USD 4.7964 ea
Line Total: USD 38.37 
Availability : 0
  
QtyUnit Price
8$ 4.7964
   
Manufacturer
Product Category
Rohs Mouser
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK953R2-40B,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK953R2-40B,127 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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Trans MOSFET N-CH 55V 191A Automotive 3-Pin(3+Tab) TO-220AB Rail
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Trans MOSFET N-CH 40V 129A Automotive 3-Pin(2+Tab) D2PAK T/R
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MOSFET, N-CH, 100V, 120A, TO-220AB
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Trans MOSFET N-CH 30V 75A Automotive 3-Pin(2+Tab) D2PAK T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 55V 154A Automotive 3-Pin(2+Tab) D2PAK T/R
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Stock Image BUK9575-55A
MOSFET RAIL PWR-MOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image BUK954R2-55B,127
Trans MOSFET N-CH 55V 191A Automotive 3-Pin(3+Tab) TO-220AB Rail
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image BUK9575-100A,127
MOSFET RAIL PWR-MOS
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image BUK9575-55A,127
MOSFET RAIL PWR-MOS
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image BUK9609-75A,118
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BUK953R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 5 V T = 25 C Fig. 2 Fig. 3 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 300 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.4 2.8 m DSon GS D j resistance V = 5 V I = 25 A T = 25 C - 2.7 3.2 m GS D j Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 32 V - 37 - nC GD GS D DS T = 25 C Fig. 13 j Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors BUK953R2-40B N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit Avalanche ruugedness E non-repetitive drain- I = 100 A V 40 V R = 50 - - 1.2 J DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy 1 All individual parts of device must be 175 C to achieve maximum current rating. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK953R2-40B TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78A hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code BUK953R2-40B BUK953R2-40B BUK953R2-40B All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 13 March 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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