BUK9535-55A,127 NXP

BUK9535-55A,127 electronic component of NXP
BUK9535-55A,127 NXP
BUK9535-55A,127 MOSFETs
BUK9535-55A,127  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9535-55A,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9535-55A,127 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9535-55A,127
Manufacturer: NXP
Category: MOSFETs
Description: NXP Semiconductors MOSFET RAIL PWR-MOS
Datasheet: BUK9535-55A,127 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0367
10$ 0.8538
100$ 0.6571
500$ 0.5801
1000$ 0.4581
2000$ 0.44
10000$ 0.4319
25000$ 0.4052
50000$ 0.3983
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Transistor Type
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Rohs Mouser
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9535-55A,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9535-55A,127 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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Image Part-Description
Stock Image BUK953R2-40B,127
Trans MOSFET N-CH 40V 222A Automotive 3-Pin(3+Tab) TO-220AB Rail
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BUK9535-55A N-channel TrenchMOS logic level FET Rev. 02 28 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current T=25C --34 A D mb P total power dissipation - - 85 W tot Static characteristics drain-source on-state V =10V I =25 A T = 25 C - 24 32 m R DSon GS D j resistance V =5V I =25 A T = 25 C - 26 35 m GS D j Avalanche ruggedness non-repetitive I =14 A V 25 V --49 mJ E DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) TO-220AB

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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